IRF420-423/irf820-823 mtp2n45/2n50 n-channel power mosfets 3.0a, 450v/500v www.artschip.com 1 description these devices are n-channel, enhancement mode, power mosfets designed especially for high speed applications, such as switching power supplies, converters, ac and dc motor controls, relay and solenoid drivers and other pulse circuits. z low r ds(on) z v gs rated at 20v z silicon gate for fast switching speeds z i dss , v ds(on) , specified at elevated temperature z rugged z low drive requirements z ease of paralleling to-204aa IRF420 irf421 irf422 irf423 to-220ab irf820 irf821 irf822 irf823 mtp2n45 mtp2n50 product summary part number v dss r ds(on) i d at tc=25 i d at tc=100 case style IRF420 500v 3.0 ? 2.5a 1.5a irf421 450v 3.0 ? 2.5a 1.5a irf422 500v 4.0 ? 2.0a 1.0a irf423 450v 4.0 ? 2.0a 1.0a to-204aa irf820 500v 3.0 ? 2.5a 1.5a irf821 450v 3.0 ? 2.5a 1.5a irf822 500v 4.0 ? 2.0a 1.0a irf823 450v 4.0 ? 2.0a 1.0a mtp2n45 450v 4.0 ? 3.0a 2.0a mtp2n50 500v 4.0 ? 3.0a 2.0a to-220ab notes for information concerning connection diagram and package outline, refer to section 7.
IRF420-423/irf820-823 mtp2n45/2n50 n-channel power mosfets 3.0a, 450v/500v www.artschip.com 2 maximum ratings symbol characteristic rating IRF420/422 irf820/822 mtp2n50 rating irf421/423 irf821/823 mtp2n45 unit v dss drain to source voltage 1 500 450 v v dgr drain to gate voltage 1 r gs =20k ? 500 450 v v gs gate to source voltage 20 20 v tj, tstg operating junction and storage temperatures -55 to +150 -55 to +150 tl maximum lead temperature for soldering purposes, 1/8? from case for 5s 275 275 maximum thermal characteristics IRF420-423/ irf820-823 mtp2n45/2n50 r ? jc thermal resistance, junction to case 3.12 1.67 /w r ? ja thermal resistance, junction to ambient 30/80 80 /w p d total power dissipation at tc=25 40 75 w i dm pulsed drain current 2 10 10 a electrical characteristics (tc=25 unless otherwise noted) symbol characteristic min max unit test conditions off characteristics 500 v (br)dss drain source breakdown voltage 1 IRF420/422/820/822 mtp2n50 irf421/423/821/823/ mtp2n45 450 v v gs =0v, i d =250a 250 a v ds =rated v dss , v gs =0v i dss zero gate voltage drain current 1000 a v ds =0.8 x rated v dss , v gs =0v, tc=125 100 i gss gate-body leakage current IRF420-423 irf820-823/mtp2n45/50 500 na v gs =20v, v ds =0v
IRF420-423/irf820-823 mtp2n45/2n50 n-channel power mosfets 3.0a, 450v/500v www.artschip.com 3 electrical characteristics (cont.) (tc=25 unless otherwise noted) symbol characteristic min max unit test conditions on characteristics 2.0 4.0 v gs(th) gate threshold voltage IRF420-423/irf820-823 mtp2n45/mtp2n50 2.0 4.5 v i d =250a, v ds =v gs i d =1.0ma, v ds =v gs 3.0 4.0 r ds(on) static drain-source on-resistance 2 IRF420/421/820/821 irf422/423/822/823 mtp2n45/50 4.0 ? v gs =10v, i d =1.0a 10 v ds(on) drain-source on-voltage2 mtp2n45/50 8 v v v gs =10v; i d =2.0a v gs =10v; i d =1.0a tc=100 gfs forward transconductance 1.0 s( ) v ds =10v, i d =1.0a dynamic characteristics ciss input capacitance 400 pf coss output capacitance 100 pf crss reverse transfer capacitance 40 pf v ds =25v, v gs =0v f=1.0mhz switching characteristics (tc=25 , figure 1,2) 3 td(on) turn-on delay time 40 ns tr rise time 50 ns td(off) turn-off delay time 60 ns tf fall time 60 ns v dd =250v, i d =1.0a v gs =10v, r gen =50 ? r gs =50 ? qg total gate charge 15 nc v gs =10v, i d =3.0a v dd =200v symbol characteristic typ max unit test conditions source-drain diode characteristics 1.4 v is=2.5a; v gs =0v v sd diode forward voltage 1.3 v is=2.0a; v gs =0v trr reverse recovery time 600 ns is=2.5a; dis/dt=100a/s notes 1. t j =+25 to +150 2. pulse width limited by t j 3. switching time measurements per formed on lem tr-58 test equrpment.
IRF420-423/irf820-823 mtp2n45/2n50 n-channel power mosfets 3.0a, 450v/500v www.artschip.com 4 typical electrical characteristics figure 1 switching test circuit typical performance curves figure 3 output characteristics figure 5 transfer characteristics figure 2 switching waveforms figure 4 static drain to source resistance vs drain current figure 6 temperature variation of gate to source threshold voltage
IRF420-423/irf820-823 mtp2n45/2n50 n-channel power mosfets 3.0a, 450v/500v www.artschip.com 5 typical performance curves (cont.) figure 7 capacitance vs drain to source voltage figure 9 forward biased safe operating area for IRF420-423 and irf820-823 figure 11 forward biased safe operating area for mtp2n45/2n50 figure 8 gate to source voltage vs total gate charge figure 10 transient thermal resistance vs time for IRF420-423 and irf820-823 figure 12 transient thermal resistance vs time for mtp2n45/2n50
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